Search results
Results from the WOW.Com Content Network
The diffusion current and drift current together are described by the drift–diffusion equation. [1] It is necessary to consider the part of diffusion current when describing many semiconductor devices. For example, the current near the depletion region of a p–n junction is dominated by the diffusion current. Inside the depletion region ...
The current carried by each electron must be , so that the total current density due to electrons is given by: = = Using the expression for gives = A similar set of equations applies to the holes, (noting that the charge on a hole is positive). Therefore the current density due to holes is given by = where p is the hole concentration and the ...
The following image shows change in excess carriers being generated (green:electrons and purple:holes) with increasing light intensity (generation rate /cm 3) at the center of an intrinsic semiconductor bar. Electrons have higher diffusion constant than holes leading to fewer excess electrons at the center as compared to holes.
In a semiconductor with an arbitrary density of states, i.e. a relation of the form = between the density of holes or electrons and the corresponding quasi Fermi level (or electrochemical potential) , the Einstein relation is [11] [12] =, where is the electrical mobility (see § Proof of the general case for a proof of this relation).
The drift velocity, and resulting current, is characterized by the mobility; for details, see electron mobility (for solids) or electrical mobility (for a more general discussion). See drift–diffusion equation for the way that the drift current, diffusion current, and carrier generation and recombination are combined into a single equation.
The conventional "hole" current is in the negative direction of the electron current and the negative of the electrical charge which gives I x = ntw(−v x)(−e) where n is charge carrier density, tw is the cross-sectional area, and −e is the charge of each electron.
This process generates current, referred to as diffusion current. Diffusion current can also be described by Fick's first law = /, where J is the diffusion current density (amount of substance) per unit area per unit time, n (for ideal mixtures) is the electron density, x is the position [length].
In the case where the electron/hole transport is limited by trap states in the form of exponential tails extending from the conduction/valence band edges, = (), the drift current density is given by the Mark-Helfrich equation, [10] = ((+)) (+ +) + + + where is the elementary charge, = / with being the thermal energy, is the effective ...