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  2. Memory timings - Wikipedia

    en.wikipedia.org/wiki/Memory_timings

    It is for this reason that DDR3-2666 CL9 has a smaller absolute CAS latency than DDR3-2000 CL7 memory. Both for DDR3 and DDR4, the four timings described earlier are not the only relevant timings and give a very short overview of the performance of memory. The full memory timings of a memory module are stored inside of a module's SPD chip.

  3. CAS latency - Wikipedia

    en.wikipedia.org/wiki/CAS_latency

    Column address strobe latency, also called CAS latency or CL, is the delay in clock cycles between the READ command and the moment data is available. [ 1 ] [ 2 ] In asynchronous DRAM , the interval is specified in nanoseconds (absolute time). [ 3 ]

  4. DDR4 SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR4_SDRAM

    DDR4 speeds are advertised as double the base clock rate due to its Double Data Rate (DDR) nature, with common speeds including DDR4-2400 and DDR4-3200, and higher speeds like DDR4-4266 and DDR4-5000 available at a premium. Unlike DDR3, DDR4 does not have a low voltage variant; it consistently operates at 1.2 V. Additionally, DDR4 improves on ...

  5. Memory latency - Wikipedia

    en.wikipedia.org/wiki/Memory_latency

    Memory latency is the time (the latency) between initiating a request for a byte or word in memory until it is retrieved by a processor. If the data are not in the processor's cache , it takes longer to obtain them, as the processor will have to communicate with the external memory cells.

  6. Synchronous dynamic random-access memory - Wikipedia

    en.wikipedia.org/wiki/Synchronous_dynamic_random...

    DDR3 and DDR4 use A12 during read and write command to indicate "burst chop", half-length data transfer; DDR4 changes the encoding of the activate command. A new signal ACT controls it, during which the other control lines are used as row address bits 16, 15 and 14. When ACT is high, other commands are the same as above.

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  8. DDR SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR_SDRAM

    The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed

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