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The RA-machine's equivalent of the universal Turing machine – with its program in the registers as well as its data – is called the random-access stored-program machine or RASP-machine. It is an example of the so-called von Neumann architecture and is closest to the common notion of a computer.
The calculator can evaluate and simplify algebraic expressions symbolically. For example, entering x^2-4x+4 returns +. The answer is "prettyprinted" by default; that is, displayed as it would be written by hand (e.g. the aforementioned + rather than x^2-4x+4). The TI-89's abilities include:
Solid-state hard drives have continued to increase in speed, from ~400 Mbit/s via SATA3 in 2012 up to ~7 GB/s via NVMe/PCIe in 2024, closing the gap between RAM and hard disk speeds, although RAM continues to be an order of magnitude faster, with single-lane DDR5 8000MHz capable of 128 GB/s, and modern GDDR even faster.
Memory modules added RAM main memory to the calculator, allowing more programming steps and/or more data registers. The original HP-41C had a main memory of 63 registers of 7 bytes each. Each register could hold either a number, a 6-character string, or up to seven program steps in the FOCAL language (program steps used a variable number of bytes).
Second, the maximum throughput of a RAM drive is limited by the speed of the RAM, the data bus, and the CPU of the computer. Other forms of storage media are further limited by the speed of the storage bus, such as IDE (PATA), SATA, USB or FireWire. Compounding this limitation is the speed of the actual mechanics of the drive motors, heads, or ...
The calculator uses the proprietary HP Nut processor produced in a bulk CMOS process and featured continuous memory, whereby the contents of memory are preserved while the calculator is turned off. [13] Though commonplace now, this was still notable in the early 1980s, and is the origin of the "C" in the model name.
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1 Mbit high speed CMOS pseudostatic RAM, made by Toshiba. Pseudostatic RAM (PSRAM or PSDRAM) is dynamic RAM with built-in refresh and address-control circuitry to make it behave similarly to static RAM (SRAM). It combines the high density of DRAM with the ease of use of true SRAM.