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Centrifugal liquid-phase epitaxy is used commercially to make thin layers of silicon, germanium, and gallium arsenide. [17] [18] Centrifugally formed film growth is a process used to form thin layers of materials by using a centrifuge. The process has been used to create silicon for thin-film solar cells [19] [20] and far-infrared ...
Liquid phase exfoliation is different from other liquid exfoliation methods, for example the production of graphene oxide, because it is much less destructive, leaving minimal defects in the basal planes of the nanosheets. It has recently emerged that LPE can also be used to convert non-layered crystals into quasi-2D nanoplatelets. [12]
Pendeo-epitaxy is mainly performed from the vapor phase via MOCVD and HVPE, and initially is used for growing gallium nitride (GaN) microelectronic device structures. In the case of GaN material system, LEO and PE technology was initiated in the late nineties and early 2000s in Prof. R.F. Davis group at NCSU.
One of the most used single crystals is that of Silicon in the semiconductor industry. The four main production methods for semiconductor single crystals are from metallic solutions: liquid phase epitaxy (LPE), liquid phase electroepitaxy (LPEE), the traveling heater method (THM), and liquid phase diffusion (LPD). [13]
In the early 1960s, liquid-phase epitaxy (LPE) was invented by Herbert Nelson of RCA Laboratories. By layering the highest-quality crystals of varying compositions, it enabled the demonstration of the highest-quality heterojunction semiconductor laser materials for many years. LPE was adopted by all the leading laboratories worldwide and was ...
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Liquid-liquid phase separation (LLPS) is well defined in the Biomolecular condensate page.. LLPS databases cover different aspects of LLPS phenomena, ranging from cellular location of the Membraneless Organelles (MLOs) to the role of a particular protein/region forming the condensate state.
Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices , including transistors . [ 1 ] MBE is used to make diodes and MOSFETs (MOS field-effect transistors ) at microwave frequencies, and to manufacture the lasers used to read optical discs ...