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The field-effect transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: ...
The most commonly used test for the investigation of TDDB behavior is "constant stress". [1] Constant stress tests can be applied in form of constant voltage stress (CVS) or constant current stress. In the former, a voltage (that is often lower than the breakdown voltage of the oxide) is applied to the gate, while its leakage current is being ...
A ChemFET is a chemically-sensitive field-effect transistor, that is a field-effect transistor used as a sensor for measuring chemical concentrations in solution. [1] When the target analyte concentration changes, the current through the transistor will change accordingly. [2]
A curve tracer is a specialised piece of electronic test equipment used to analyze the characteristics of discrete electronic components, such as diodes, transistors, thyristors, and vacuum tubes. The device contains voltage and current sources that can be used to stimulate the device under test (DUT).
The easiest way to tell if a FET is common source, common drain, or common gate is to examine where the signal enters and leaves. The remaining terminal is what is known as "common". In this example, the signal enters the gate, and exits the drain. The only terminal remaining is the source. This is a common-source FET circuit.
The mode can be determined by the sign of the threshold voltage (gate voltage relative to source voltage at the point where an inversion layer just forms in the channel): for an N-type FET, enhancement-mode devices have positive thresholds, and depletion-mode devices have negative thresholds; for a P-type FET, enhancement-mode have negative ...
The concept of a field-effect transistor (FET) was first proposed by Julius Edgar Lilienfeld, who received a patent for his idea in 1930. [6] He proposed that a field-effect transistor behaves as a capacitor with a conducting channel between a source and a drain electrode. Applied voltage on the gate electrode controls the amount of charge ...
If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that ...