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The 2N7000 has been referred to as a "FETlington" and as an "absolutely ideal hacker part." [3] The word "FETlington" is a reference to the Darlington-transistor-like saturation characteristic.
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The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. [1] Its numbering follows the JEDEC standard. [2] It is a transistor type of enduring popularity. [3] [4] [5]
The 2N3904 is an NPN transistor that can only switch one-third the current of the 2N2222 but has otherwise similar characteristics. The 2N3904 exhibits its forward gain (beta) peak at a lower current than the 2N2222, and is useful in amplifier applications with reduced I c , e.g., (gain peak at 10 mA for the 2N3904 but 150 mA for the 2N2222).
In semiconductor manufacturing, the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node.. The term "2 nanometer", or alternatively "20 angstrom" (a term used by Intel), has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors.
The "TO" designation stands for "transistor outline". [2] TO-220 packages have three leads. Similar packages with two, four, five or seven leads are also manufactured. A notable characteristic is a metal tab with a hole, used to mount the case to a heatsink, [3] allowing the component to dissipate more heat than one constructed in a TO-92 case.
Transistor packages are mainly standardized, but the assignment of a transistor's functions to the terminals is not: other transistor types can assign other functions to the package's terminals. Even for the same transistor type the terminal assignment can vary (normally indicated by a suffix letter to the part number, q.e. BC212L and BC212K).
Illustration of safe operating area of a bipolar power transistor. Any combination of collector current and voltage below the line can be tolerated by the transistor. Often, in addition to the continuous rating, separate SOA curves are also plotted for short duration pulse conditions (1 ms pulse, 10 ms pulse, etc.).