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Furnaces used for diffusion and thermal oxidation at LAAS technological facility in Toulouse, France. In microfabrication, thermal oxidation is a way to produce a thin layer of oxide (usually silicon dioxide) on the surface of a wafer. The technique forces an oxidizing agent to diffuse into the wafer at high temperature and react with it.
Although thermal degradation is defined as an oxygen free process it is difficult in practise to completely exclude oxygen. Where this is the case thermal oxidation is to be expected, leading to the formation of free radicals by way of hydroperoxides. These may then participate in thermal degradation reactions, accelerating the rate of breakdown.
By utilizing a suitable oxidation catalyst, the ignition temperature can be reduced to around 200 °C (392 °F). [8] This can result in lower operating costs than a RTO. Most systems operate within the 260 °C (500 °F) to 1,000 °C (1,830 °F) degree range. Some systems are designed to operate both as RCOs and RTOs.
Processes in the thermal degradation of organic matter at atmospheric pressure.. Thermal decomposition, or thermolysis, is a chemical decomposition of a substance caused by heat. The decomposition temperature of a substance is the temperature at which the substance chemically decomposes.
Autoxidation (sometimes auto-oxidation) refers to oxidations brought about by reactions with oxygen at normal temperatures, without the intervention of flame or electric spark. [1] The term is usually used to describe the gradual degradation of organic compounds in air at ambient temperatures.
During the thermal cleaning process, at temperatures from 310 to 540 °C (600 to 1,000 °F), [87] organic material is converted by pyrolysis and oxidation into volatile organic compounds, hydrocarbons and carbonized gas. [88] Inorganic elements remain. [89] Several types of thermal cleaning systems use pyrolysis:
Thermogravimetric analysis or thermal gravimetric analysis (TGA) is a method of thermal analysis in which the mass of a sample is measured over time as the temperature changes. . This measurement provides information about physical phenomena, such as phase transitions, absorption, adsorption and desorption; as well as chemical phenomena including chemisorptions, thermal decomposition, and ...
In particular, it is used to predict and interpret thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965 by Bruce Deal and Andrew Grove of Fairchild Semiconductor, [1] building on Mohamed M. Atalla's work on silicon surface passivation by thermal oxidation at Bell Labs in the late 1950s. [2]