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Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
Carrier mobility in semiconductors is doping dependent. In silicon (Si) the electron mobility is of the order of 1,000, in germanium around 4,000, and in gallium arsenide up to 10,000 cm 2 /(V⋅s). Hole mobilities are generally lower and range from around 100 cm 2 /(V⋅s) in gallium arsenide, to 450 in silicon, and 2,000 in germanium. [1]
In semiconductor physics, a donor is a dopant atom that, when added to a semiconductor, can form a n-type region. Phosphorus atom acting as a donor in the simplified 2D silicon lattice. For example, when silicon (Si), having four valence electrons , is to be doped as a n-type semiconductor , elements from group V like phosphorus (P) or arsenic ...
In semiconductor physics, an acceptor is a dopant atom that when substituted into a semiconductor lattice forms a p-type region. Boron atom acting as an acceptor in the simplified 2D silicon lattice. When silicon (Si), having four valence electrons , is doped with elements from group III of the periodic table , such as boron (B) and aluminium ...
An extrinsic semiconductor that has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. An electron acceptor dopant is an atom which accepts an electron from the lattice, creating a vacancy where an electron should be called a hole which can move ...
A degenerate semiconductor is a semiconductor with such a high level of doping that the material starts to act more like a metal than a semiconductor. Unlike non-degenerate semiconductors, these kinds of semiconductor do not obey the law of mass action, which relates intrinsic carrier concentration with temperature and bandgap.
In semiconductors, the band gap of a semiconductor can be of two basic types, a direct band gap or an indirect band gap. The minimal-energy state in the conduction band and the maximal-energy state in the valence band are each characterized by a certain crystal momentum (k-vector) in the Brillouin zone. If the k-vectors are different, the ...
The addition of a dopant to a semiconductor, known as doping, has the effect of shifting the Fermi levels within the material. [ citation needed ] This results in a material with predominantly negative ( n-type ) or positive ( p-type ) charge carriers depending on the dopant variety.