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A semiconductor device that produces coherent laser radiation when properly energized. leakage inductance The inductance of a transformer that results from magnetic flux not linked by both primary and secondary windings. light-emitting diode A semiconductor device that produces light or infrared or ultraviolet radiation when properly energized.
This is a list of terms used in the manufacture of electronic micro-components. Many of the terms are already defined and explained in Wikipedia; this glossary is for looking up, comparing, and reviewing the terms. You can help enhance this page by adding new terms or clarifying definitions of existing ones.
This is an alphabetical list of notable technology terms. It includes terms with notable applications in computing, networking, and other technological fields. Contents
BCS is able to give an approximation for the quantum-mechanical many-body state of the system of (attractively interacting) electrons inside the metal. This state is now known as the BCS state. In the normal state of a metal, electrons move independently, whereas in the BCS state, they are bound into Cooper pairs by the attractive interaction.
When an electric field is applied across a semiconductor material, a current is produced due to the flow of charge carriers. Ductility is a measure of a material's ability to undergo significant plastic deformation before rupture, which may be expressed as percent elongation or percent area reduction from a tensile test. Dynamics
Integrated circuit packaging is the final stage of semiconductor device fabrication, in which the die is encapsulated in a supporting case that prevents physical damage and corrosion. The case, known as a " package ", supports the electrical contacts which connect the device to a circuit board.
Very-large-scale integration (VLSI) is the process of creating an integrated circuit (IC) by combining millions or billions of MOS transistors onto a single chip. VLSI began in the 1970s when MOS integrated circuit (metal oxide semiconductor) chips were developed and then widely adopted, enabling complex semiconductor and telecommunications technologies.
A four-layer semiconductor device with a P-N-P-N structure: An insulated-gate bipolar transistor combining features from bipolar transistors and MOSFETs Terminals: Anode, cathode, gate: Emitter, collector, gate Layers: Four layers: Three layers Junction: PNPN structure: NPN(P) structure Modes of operation: Reverse blocking, forward blocking ...