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Single data rate SDRAM has a single 10-bit programmable mode register. Later double-data-rate SDRAM standards add additional mode registers, addressed using the bank address pins. For SDR SDRAM, the bank address pins and address lines A10 and above are ignored, but should be zero during a mode register write.
DDR4 memory is supplied in 288-pin dual in-line memory modules (DIMMs), similar in size to 240-pin DDR3 DIMMs. DDR4 RAM modules feature pins that are spaced more closely at 0.85 mm compared to the 1.0 mm spacing in DDR3, allowing for a higher pin density within the same standard DIMM length of 133.35 mm (5¼ inches).
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed
Double data rate SDRAM (DDR SDRAM or DDR) was a later development of SDRAM, used in PC memory beginning in 2000. Subsequent versions are numbered sequentially (DDR2, DDR3, etc.). DDR SDRAM internally performs double-width accesses at the clock rate, and uses a double data rate interface to transfer one half on each clock edge. DDR2 and DDR3 ...
288-pin: DDR4 SDRAM and DDR5 SDRAM [7] SO-DIMM. 72-pin: FPM DRAM and EDO DRAM; [8] different pin configuration from 72-pin SIMM; 144-pin: SDR SDRAM, [8] sometimes used for DDR2 SDRAM; 200-pin: DDR SDRAM [8] and DDR2 SDRAM; 204-pin: DDR3 SDRAM; 260-pin: DDR4 SDRAM; 260-pin: UniDIMMs carrying either DDR3 or DDR4 SDRAM; differently notched than ...
Although designed to match the performance of XDR DRAM on high-pin-count memory, it would not be able to match XDR performance on low-pin-count designs. [6] On February 9, 2007, Samsung announced mass-production of 32-bit 512-Mbit GDDR4 SDRAM, rated at 2.8 Gbit/s per pin, or 11.2 GB/s per module. This module was used for some AMD cards. [7]
At Hot Chips 2016, Samsung announced GDDR6 as the successor of GDDR5X. [5] [6] Samsung later announced that the first products would be 16 Gbit/s, 1.35 V chips.[7] [8] In January 2018, Samsung began mass production of 16 Gb (2 GB) GDDR6 chips, fabricated on a 10 nm class process and with a data rate of up to 18 Gbit/s per pin.
GDDR SDRAM is distinct from the more widely known types of DDR SDRAM, such as DDR4 and DDR5, although they share some of the same features—including double data rate (DDR) data transfers. As of 2025, GDDR SDRAM has been succeeded by GDDR2, GDDR3, GDDR4, GDDR5, GDDR5X, GDDR6, GDDR6X, GDDR6W and GDDR7.