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The bonded wafers are characterized in order to evaluate a technology's yield, bonding strength and level of hermeticity either for fabricated devices or for the purpose of process development. Therefore, several different approaches for the bond characterization have emerged. On the one hand non-destructive optical methods to find cracks or ...
The wafers can be cleaned using H 2 O 2 + H 2 SO 4 or oxygen plasma. The cleaned wafers are rinsed with DI water and dried at elevated temperature, e.g. 100 to 200 °C for 120 min. [17] The adhesion promoter with a specific thickness is deposited, i.e. spin-coated or contact printed on the wafer to improve the bonding strength.
The procedural steps of the direct bonding process of wafers any surface is divided into wafer preprocessing, pre-bonding at room temperature and; annealing at elevated temperatures. Even though direct bonding as a wafer bonding technique is able to process nearly all materials, silicon is the most established material up to now. Therefore, the ...
Surface activated bonding (SAB) is a non-high-temperature wafer bonding technology with atomically clean and activated surfaces. Surface activation prior to bonding by using fast atom bombardment is typically employed to clean the surfaces. High-strength bonding of semiconductors, metals, and dielectrics can be obtained even at room temperature ...
There are several methods for 3D IC design, including recrystallization and wafer bonding methods. There are two major types of wafer bonding, Cu-Cu connections (copper-to-copper connections between stacked ICs, used in TSVs) [18] [19] and through-silicon via (TSV). 3D ICs with TSVs may use solder microbumps, small solder balls as an interface between two individual dies in a 3D IC. [20]
Wafer bonding is a packaging technology for materials integration as well as for hermetic sealing and encapsulation. This method describes the process for all suitable bonding techniques that enable the contacting of two or more wafers.
The major disadvantage of SOI technology when compared to conventional semiconductor industry is increased cost of manufacturing. [29] As of 2012 only IBM and AMD used SOI as basis for high-performance processors and the other manufacturers (Intel, TSMC, Global Foundries etc.) used conventional silicon wafers to build their CMOS chips. [29]
Wafer-level packaging is implemented before wafer dicing, as shown in Fig. 3(a), and is based on anodic, metal diffusion, metal eutectic, glass frit, polymer adhesive, and silicon fusion wafer bonding. The selection of a wafer-level packaging technique is based on balancing the thermal expansion coefficients of the material layers of the RF ...
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