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RADA Electronic Industries Ltd. is a global defense technology company focused on proprietary radar and legacy avionics systems. It includes RADA Electronic Industries and its U.S-based subsidiaries in its development, manufacture and sale of goods designed primarily for the defense industry and aerospace markets. [ 3 ]
The company was established in Tychy in 1991 as a RAM distributor. In 1996 it became the leader in the Polish memory distribution market. [ 2 ] In 2003 the company moved to Ĺaziska Górne where it has been manufacturing its own products under the brand name "GOODRAM" ever since.
The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per ...
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory .
Software can "partition" a portion of a computer's RAM, allowing it to act as a much faster hard drive that is called a RAM disk. A RAM disk loses the stored data when the computer is shut down, unless memory is arranged to have a standby battery source, or changes to the RAM disk are written out to a nonvolatile disk.
ELTA Systems Ltd (ELTA) is a leading Israeli defense technology company specializing in designing, developing, and producing advanced electronic systems and sensors. A group and subsidiary of the government-owned Israel Aerospace Industries (IAI) [ 1 ] offers an extensive product portfolio encompassing Radar , ELINT , COMINT , C 4 STAR ...
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
Innotron's initial capacity was ~20,000 wafers per month; a small output in terms of the industry as a whole. [ 3 ] In 2019, Innotron, which had changed its name to Changxin Memory Technologies , was reported to have made some design changes in an attempt to avoid possible technology-related sanctions deriving from the China–United States ...