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Metal oxide surfaces can have both Brønsted and Lewis acid sites present at the same time which leads to a nonspecific interaction between the oxide and the indicator. [16] Also, as outlined in the theory section, the perturbation of neighboring sites upon adsorption of indicator molecules compromises the integrity of this model.
The MNOS (metal–nitride–oxide–semiconductor transistor) utilizes a nitride-oxide layer insulator between the gate and the body. The ISFET (ion-sensitive field-effect transistor) can be used to measure ion concentrations in a solution; when the ion concentration (such as H + , see pH electrode ) changes, the current through the transistor ...
The traditional metal–oxide–semiconductor (MOS) structure is obtained by growing a layer of silicon dioxide (SiO 2) on top of a silicon substrate, commonly by thermal oxidation and depositing a layer of metal or polycrystalline silicon (the latter is commonly used).
The definition of high-entropy oxide is debated. In oxide literature, the term is commonly used to refer to any oxide with at least five principal cations. [42] However, it has been suggested that this is a misnomer, as most reports neglect to calculate configurational entropy. [42]
Although most metal oxides are crystalline solids, many non-metal oxides are molecules. Examples of molecular oxides are carbon dioxide and carbon monoxide. All simple oxides of nitrogen are molecular, e.g., NO, N 2 O, NO 2 and N 2 O 4. Phosphorus pentoxide is a more complex molecular oxide with a deceptive name, the real formula being P 4 O 10.
An SOI MOSFET is a metal–oxide–semiconductor field-effect transistor (MOSFET) device in which a semiconductor layer such as silicon or germanium is formed on an insulator layer which may be a buried oxide (BOX) layer formed in a semiconductor substrate. [8] [9] [10] SOI MOSFET devices are adapted for use by the computer industry.
The phrase "metal–oxide–semiconductor" is a reference to the physical structure of MOS field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon.
An iron oxide is a chemical compound composed of iron and oxygen. ... so in that sense these materials are important precursors to iron metal and its many alloys.