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A naïve conclusion is that there is no tunneling at all, and the bosons are truly "trapped" on one side of the junction. However, macroscopic quantum self-trapping does not rule out quantum tunneling — rather, only the possibility of observing tunneling is ruled out. In the event that a particle tunnels through the barrier, another particle ...
The electron and the hole can be seen as hydrogen in the Bohr model with the hydrogen nucleus replaced by the hole of positive charge and negative electron mass. Then the energy levels of the exciton can be represented as the solution to the particle in a box at the ground level (n = 1) with the mass replaced by the reduced mass. Thus by ...
Furthermore, the model shows that the energy levels are proportional to the inverse of the effective mass. Consequently, heavy holes and light holes will have different energy states when trapped in the well. Heavy and light holes arise when the maxima of valence bands with different curvature coincide; resulting in two different effective ...
First, self-trapped exciton states are always of a small radius, of the order of lattice constant, due to their electric neutrality. Second, there exists a self-trapping barrier separating free and self-trapped states, hence, free excitons are metastable. Third, this barrier enables coexistence of free and self-trapped states of excitons.
Gallium atoms may migrate through this layer and get scavenged by the gold above, creating a defect-rich gallium-depleted zone under the contact; gold and oxygen then migrate oppositely, resulting in increased resistance of the ohmic contact and depletion of effective doping level. [13]
The trapped charge density at the oxide-nitride interface is proportional to the integral of the Poole–Frenkel current flowed across it. [1] With an increasing number of memory write and erase cycles, retention characteristics worsen due to the increasing bulk conductivity in the nitride.
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Deep-level traps or deep-level defects are a generally undesirable type of electronic defect in semiconductors.They are "deep" in the sense that the energy required to remove an electron or hole from the trap to the valence or conduction band is much larger than the characteristic thermal energy kT, where k is the Boltzmann constant and T is the temperature.