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Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.
A memristor (/ ˈ m ɛ m r ɪ s t ər /; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage.It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which also comprises the resistor, capacitor and inductor.
[1] [2] A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media (such as hard disks and magnetic tape), where the time required to read and write data items varies significantly ...
Wide I/O 2 is designed for high-performance, compact devices, often integrated into processors or system on a chip (SoC) packages. In contrast, HBM targets graphics memory and general computing, while Hybrid Memory Cube (HMC) is aimed at high-end servers and enterprise applications.
Besides issues with size a significant challenge of modern SRAM cells is a static current leakage. The current, that flows from positive supply (V dd), through the cell, and to the ground, increases exponentially when the cell's temperature rises. The cell power drain occurs in both active and idle states, thus wasting useful energy without any ...
For one, each application of the current physically degrades the cell, such that the cell will eventually be unwritable. Write cycles on the order of 10 5 to 10 6 are typical, limiting flash applications to roles where constant writing is not common. The current also requires an external circuit to generate, using a system known as a charge ...
For example, a system with 2 13 = 8,192 rows would require a staggered refresh rate of one row every 7.8 μs which is 64 ms divided by 8,192 rows. A few real-time systems refresh a portion of memory at a time determined by an external timer function that governs the operation of the rest of a system, such as the vertical blanking interval that ...
The memory cell is the fundamental building block of memory. It can be implemented using different technologies, such as bipolar, MOS, and other semiconductor devices.It can also be built from magnetic material such as ferrite cores or magnetic bubbles. [1]