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The top of the capacitor is connected to the access transistor's drain terminal via a polysilicon strap (Kenner, pp. 42–44). A trench capacitor's depth-to-width ratio in DRAMs of the mid-2000s can exceed 50:1 (Jacob, p. 357). Trench capacitors have numerous advantages.
Ferroelectric RAM Magnetoresistive random-access memory nvSRAM BBSRAM Technique The basic storage element is a ferroelectric capacitor. The capacitor can be polarized up or down by applying an electric field [18] Similar to ferroelectric RAM, but the atoms align themselves in the direction of an external magnetic force. This effect is used to ...
Ram 5500 tow truck. The Ram Heavy Duty is available in three different configurations: a two-door regular cab with a long bed, a four-door crew cab with either a standard bed or a long bed, or a four-door Mega Cab (a crew cab extended by 11.1 in (280 mm) allowing the rear seats to recline or offering more in-cab storage [2]) with a standard bed.
The Ram 1500 (DT) is the fifth generation of the Ram Pickup, manufactured by the Ram Trucks division of Stellantis. The fifth generation Ram was introduced in January 2018 at the North American International Auto Show in Detroit , Michigan as a 2019 model year.
Dodge pioneered the extended-cab pickup with the introduction of the Club Cab for 1973. Available with either a 6.5 ft (2.0 m) or 8 ft (2.4 m) Sweptline bed, the Club Cab was a two-door cab with small rear windows which had more space behind the seats than the standard cab, but was not as long as the four-door crew cab.
The Ram 1500 (2010–2018), Ram 1500 Classic (2019–2024), Ram 2500 through 5500, and Ram DX chassis cab (Mexican market) were assembled at Saltillo Truck Assembly Plant in Coahuila, Mexico. From 2009 to 2018, the Ram 1500 (DS) was assembled at Warren Truck Assembly in Warren, Michigan, and the 2009 Dodge Ram 1500 was also assembled at Saint ...
The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per ...
The two most common types of DRAM memory cells since the 1980s have been trench-capacitor cells and stacked-capacitor cells. [25] Trench-capacitor cells are where holes (trenches) are made in a silicon substrate, whose side walls are used as a memory cell, whereas stacked-capacitor cells are the earliest form of three-dimensional memory (3D ...