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Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
For example, doping pure silicon with a small amount of phosphorus will increase the carrier density of electrons, n. Then, since n > p, the doped silicon will be a n-type extrinsic semiconductor. Doping pure silicon with a small amount of boron will increase the carrier density of holes, so then p > n, and it will be a p-type extrinsic ...
In semiconductor physics, a donor is a dopant atom that, when added to a semiconductor, can form a n-type region. Phosphorus atom acting as a donor in the simplified 2D silicon lattice. For example, when silicon (Si), having four valence electrons , is to be doped as a n-type semiconductor , elements from group V like phosphorus (P) or arsenic ...
An extrinsic semiconductor that has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. An electron acceptor dopant is an atom which accepts an electron from the lattice, creating a vacancy where an electron should be called a hole which can move ...
In semiconductor physics, an acceptor is a dopant atom that when substituted into a semiconductor lattice forms a p-type region. Boron atom acting as an acceptor in the simplified 2D silicon lattice. When silicon (Si), having four valence electrons , is doped with elements from group III of the periodic table , such as boron (B) and aluminium ...
However, these impurities introduce new energy levels in the band gap affecting the band structure which may alter the electronic properties of the semiconductor to a great extent. Having a shallow donor level means that these additional energy levels are not more than 3 k b T {\displaystyle 3k_{b}T} (0.075 eV at room temperature) away from the ...
Carrier mobility in semiconductors is doping dependent. In silicon (Si) the electron mobility is of the order of 1,000, in germanium around 4,000, and in gallium arsenide up to 10,000 cm 2 /(V⋅s). Hole mobilities are generally lower and range from around 100 cm 2 /(V⋅s) in gallium arsenide, to 450 in silicon, and 2,000 in germanium. [1]
A degenerate semiconductor is a semiconductor with such a high level of doping that the material starts to act more like a metal than a semiconductor. Unlike non-degenerate semiconductors, these kinds of semiconductor do not obey the law of mass action, which relates intrinsic carrier concentration with temperature and bandgap.