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Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
For example, doping pure silicon with a small amount of phosphorus will increase the carrier density of electrons, n. Then, since n > p, the doped silicon will be a n-type extrinsic semiconductor. Doping pure silicon with a small amount of boron will increase the carrier density of holes, so then p > n, and it will be a p-type extrinsic ...
An extrinsic semiconductor that has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. An electron acceptor dopant is an atom which accepts an electron from the lattice, creating a vacancy where an electron should be called a hole which can move ...
When a semiconductor is doped by Group V elements, they will behave like donors creating free electrons, known as "n-type" doping. When a semiconductor is doped by Group III elements, they will behave like acceptors creating free holes, known as "p-type" doping. The semiconductor materials used in electronic devices are doped under precise ...
In nominally doped semiconductors, the Fermi level lies between the conduction and valence bands. For example, in n-doped semiconductor, as the doping concentration is increased, electrons populate states within the conduction band which pushes the Fermi level to higher energy. In the case of degenerate level of doping, the Fermi level lies ...
In intrinsic semiconductors the number of excited electrons and the number of holes are equal: n = p. This may be the case even after doping the semiconductor, though only if it is doped with both donors and acceptors equally. In this case, n = p still holds, and the semiconductor remains intrinsic, though doped.
Oftentimes, a dopant is used, giving an excess of electrons (in so-called n-type doping) or holes (in so-called p-type doping) within the band structure. This introduces a majority carrier and a minority carrier. As a result of this, the carrier lifetime plays a vital role in many semiconductor devices that have dopants.
In semiconductor physics, an acceptor is a dopant atom that when substituted into a semiconductor lattice forms a p-type region. Boron atom acting as an acceptor in the simplified 2D silicon lattice. When silicon (Si), having four valence electrons , is doped with elements from group III of the periodic table , such as boron (B) and aluminium ...