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Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
In semiconductor physics, a donor is a dopant atom that, when added to a semiconductor, can form a n-type region. Phosphorus atom acting as a donor in the simplified 2D silicon lattice. For example, when silicon (Si), having four valence electrons , is to be doped as a n-type semiconductor , elements from group V like phosphorus (P) or arsenic ...
The addition of a dopant to a semiconductor, known as doping, has the effect of shifting the Fermi levels within the material. [ citation needed ] This results in a material with predominantly negative ( n-type ) or positive ( p-type ) charge carriers depending on the dopant variety.
This process is known as doping, and the resulting semiconductors are known as doped or extrinsic semiconductors. Apart from doping, the conductivity of a semiconductor can be improved by increasing its temperature. This is contrary to the behavior of a metal, in which conductivity decreases with an increase in temperature. [4]
N-type semiconductors are created by doping an intrinsic semiconductor with an electron donor element during manufacture. The term n-type comes from the negative charge of the electron. In n-type semiconductors, electrons are the majority carriers and holes are the minority carriers. A common dopant for n-type silicon is phosphorus or arsenic.
Semiconductor doping with boron, phosphorus, or arsenic is a common application of ion implantation. When implanted in a semiconductor, each dopant atom can create a charge carrier in the semiconductor after annealing. A hole can be created for a p-type dopant, and an electron for an n-type dopant. This modifies the conductivity of the ...
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Metal–oxide–semiconductor structure on P-type silicon. Another example of a depletion region occurs in the MOS capacitor. It is shown in the figure to the right, for a P-type substrate. Supposing that the semiconductor initially is charge neutral, with the charge due to holes exactly balanced by the negative charge due to acceptor doping ...