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Charge carrier density, also known as carrier concentration, denotes the number of charge carriers per volume. In SI units, it is measured in m −3. As with any density, in principle it can depend on position. However, usually carrier concentration is given as a single number, and represents the average carrier density over the whole material.
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Generally, the carrier mobility μ depends on temperature T, on the applied electric field E, and the concentration of localized states N. Depending on the model, increased temperature may either increase or decrease carrier mobility, applied electric field can increase mobility by contributing to thermal ionization of trapped charges, and ...
Free carrier concentration is the concentration of free carriers in a doped semiconductor. It is similar to the carrier concentration in a metal and for the purposes of calculating currents or drift velocities can be used in the same way. Free carriers are electrons that have been introduced into the conduction band (valence band) by doping ...
Continuous charge distribution. The volume charge density ρ is the amount of charge per unit volume (cube), surface charge density σ is amount per unit surface area (circle) with outward unit normal nĚ‚, d is the dipole moment between two point charges, the volume density of these is the polarization density P.
N dop is the net density of dopants (either donors or acceptors). When doping profiles exceed the Debye length, majority carriers no longer behave according to the distribution of the dopants. Instead, a measure of the profile of the doping gradients provides an "effective" profile that better matches the profile of the majority carrier density.
In electromagnetism, charge density is the amount of electric charge per unit length, surface area, or volume. Volume charge density (symbolized by the Greek letter ρ) is the quantity of charge per unit volume, measured in the SI system in coulombs per cubic meter (C⋅m −3), at any point in a volume.
The average free time of flight of a carrier and therefore the relaxation time is inversely proportional to the scattering probability. [15] [16] [18] For example, lattice scattering alters the average electron velocity (in the electric-field direction), which in turn alters the tendency to scatter off impurities. There are more complicated ...