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The first paper dealing with avalanche transistors was Ebers & Miller (1955).The paper describes how to use alloy-junction transistors in the avalanche breakdown region in order to overcome speed and breakdown voltage limitations which affected the first models of such kind of transistor when used in earlier computer digital circuits.
In electronics, an avalanche diode is a diode (made from silicon or other semiconductor) that is designed to experience avalanche breakdown at a specified reverse bias voltage. The junction of an avalanche diode is designed to prevent current concentration and resulting hot spots, so that the diode is undamaged by the breakdown.
Avalanche breakdown (or the avalanche effect) is a phenomenon that can occur in both insulating and semiconducting materials. It is a form of electric current multiplication that can allow very large currents within materials which are otherwise good insulators. It is a type of electron avalanche.
Commercial single-photon avalanche diode module for optical photons. A single-photon avalanche diode (SPAD), also called Geiger-mode avalanche photodiode [1] (G-APD or GM-APD [2]) is a solid-state photodetector within the same family as photodiodes and avalanche photodiodes (APDs), while also being fundamentally linked with basic diode behaviours.
A unidirectional device operates as a rectifier in the forward direction like any other avalanche diode, but is made and tested to handle very large peak currents. A bidirectional transient-voltage-suppression diode can be represented by two mutually opposing avalanche diodes in series with one another and connected in parallel with the circuit ...
An avalanche photodiode (APD) is a highly sensitive type of photodiode, which in general are semiconductor diodes that convert light into electricity via interband excitation coupled with impact ionization.
Snapback is a mechanism in a bipolar transistor in which avalanche breakdown or impact ionization provides a sufficient base current to turn on the transistor. It is used intentionally in the design of certain ESD protection devices integrated onto semiconductor chips.
In field-effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an on state or an off state at zero gate–source voltage. Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits.
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