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  2. Insulated-gate bipolar transistor - Wikipedia

    en.wikipedia.org/wiki/Insulated-gate_bipolar...

    The IGBT accounts for 27% of the power transistor market, second only to the power MOSFET (53%), and ahead of the RF amplifier (11%) and bipolar junction transistor (9%). [35] The IGBT is widely used in consumer electronics, industrial technology, the energy sector, aerospace electronic devices, and transportation.

  3. Static synchronous compensator - Wikipedia

    en.wikipedia.org/wiki/Static_synchronous_compensator

    The thyristor dominated the FACTs and HVDC world until the late 20th century, when the IGBT began to match its power ratings. [9] With the IGBT, the first voltage-sourced converters and STATCOMs began to enter the FACTs world. A prototype 1 MVAr STATCOM was described in a report by Empire State Electric Energy Research Corporation in 1987. [10]

  4. Bipolar junction transistor - Wikipedia

    en.wikipedia.org/wiki/Bipolar_junction_transistor

    h rx = h re, a reverse transfer relationship, it represents the dependence of the transistor's (input) I B –V BE curve on the value of (output) V CE. It is usually very small and is often neglected (assumed to be zero) at DC. h fx = h fe, the "forward" current-gain of the transistor, sometimes written h 21.

  5. Power semiconductor device - Wikipedia

    en.wikipedia.org/wiki/Power_semiconductor_device

    The thyristor is a family of three-terminal devices that include SCRs, GTOs, and MCT. For most of the devices, a gate pulse turns the device on. The device turns off when the anode voltage falls below a value (relative to the cathode) determined by the device characteristics. When off, it is considered a reverse voltage blocking device. [19]

  6. Field-effect transistor - Wikipedia

    en.wikipedia.org/wiki/Field-effect_transistor

    I–V characteristics and output plot of a JFET n-channel transistor Simulation result for right side: formation of inversion channel (electron density) and left side: current-gate voltage curve (transfer characteristics) in an n-channel nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V. FET conventional symbol ...

  7. Threshold voltage - Wikipedia

    en.wikipedia.org/wiki/Threshold_voltage

    One standard thin oxide is used for most transistors, another for I/O driver cells, and a third for memory-and-pass transistor cells. These differences are based purely on the characteristics of oxide thickness on threshold voltage of CMOS technologies.

  8. Power electronics - Wikipedia

    en.wikipedia.org/wiki/Power_electronics

    An HVDC thyristor valve tower 16.8 m tall in a hall at Baltic Cable AB in Sweden A battery charger is an example of a piece of power electronics. Power grid designer in front of a newly installed 880kV thyristor valve array A PCs power supply is an example of a piece of power electronics, whether inside or outside of the cabinet.

  9. Transfer function - Wikipedia

    en.wikipedia.org/wiki/Transfer_function

    The transfer function of a two-port electronic circuit, such as an amplifier, might be a two-dimensional graph of the scalar voltage at the output as a function of the scalar voltage applied to the input; the transfer function of an electromechanical actuator might be the mechanical displacement of the movable arm as a function of electric ...