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Aluminium nitride (Al N) is a solid nitride of aluminium. It has a high thermal conductivity of up to 321 W/(m·K) [ 5 ] and is an electrical insulator. Its wurtzite phase (w-AlN) has a band gap of ~6 eV at room temperature and has a potential application in optoelectronics operating at deep ultraviolet frequencies.
More conveniently, the salt can be made by reacting nitric acid with aluminium hydroxide. Aluminium nitrate may also be prepared a metathesis reaction between aluminium sulfate and a nitrate salt with a suitable cation such as barium, strontium, calcium, silver, or lead. e.g. Al 2 (SO 4) 3 + 3 Ba(NO 3) 2 → 2 Al(NO 3) 3 + 3 BaSO 4.
Aluminium oxynitride (marketed under the name ALON by Surmet Corporation [3]) is a transparent ceramic composed of aluminium, oxygen and nitrogen. Aluminium oxynitride is optically transparent (≥80% for 2 mm thickness) in the near-ultraviolet , visible, and mid-wave- infrared regions of the electromagnetic spectrum.
Only one alkali metal nitride is stable, the purple-reddish lithium nitride (Li 3 N), which forms when lithium burns in an atmosphere of N 2. [7] Sodium nitride and potassium nitride has been generated, but remains a laboratory curiosity. The nitrides of the alkaline earth metals that have the formula M 3 N 2 are however numerous.
Titanium nitride (TiN; sometimes known as tinite) is an extremely hard ceramic material, often used as a physical vapor deposition (PVD) coating on titanium alloys, steel, carbide, and aluminium components to improve the substrate's surface properties.
Magnesium nitride, which possesses the chemical formula Mg 3 N 2, is an inorganic compound of magnesium and nitrogen. At room temperature and pressure it is a greenish yellow powder. At room temperature and pressure it is a greenish yellow powder.
This tendency can be decreased by coating the silicon carbide particles with a suitable oxide or nitride, preoxidation of the particles to form a silica coating, or using a layer of sacrificial metal. [9] An aluminium-aluminium carbide composite material can be made by mechanical alloying, by mixing aluminium powder with graphite particles.
Four pnictides, aluminium nitride (AlN), aluminium phosphide (AlP), aluminium arsenide (AlAs), and aluminium antimonide (AlSb), are known. They are all III-V semiconductors isoelectronic to silicon and germanium, all of which but AlN have the zinc blende structure. All four can be made by high-temperature (and possibly high-pressure) direct ...