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Team and Deathmatch based very fast FPS AssaultCube: Rabid Viper Productions 2006 2022-04-01 (1.3.0.2) Linux, Mac OS, Windows, Android: Cube Engine zlib License (code), Individual licenses (media) Realistic environments, fast arcade game play, many game modes. Single/Multiplayer. AssaultCube Reloaded (ACR) AssaultCube Reloaded Task Force 2010 2021
Indium gallium nitride (InGaN, In x Ga 1−x N) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its bandgap can be tuned by varying the amount of indium in the alloy.
Feature size is determined by the width of the smallest lines that can be patterned in a semiconductor fabrication process, this measurement is known as the linewidth.
Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. [5] Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature.