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2. Bipolar junction transistor - Wikipedia

   en.wikipedia.org/wiki/Bipolar_junction_transistor

   Simplified cross section of a planar NPN bipolar junction transistor. BJTs consists of three differently doped semiconductor regions: the emitter region, the base region and the collector region. These regions are, respectively, p type, n type and p type in a PNP transistor, and n type, p type and n type in an NPN transistor.

3. Bipolar transistor biasing - Wikipedia

   en.wikipedia.org/wiki/Bipolar_transistor_biasing

   A bias network is selected to stabilize the operating point of the transistor, by reducing the following effects of device variability, temperature, and voltage changes: [1] The gain of a transistor can vary significantly between different batches, which results in widely different operating points for sequential units in serial production or ...

4. Common base - Wikipedia

   en.wikipedia.org/wiki/Common_base

   Figure 1: Basic NPN common base circuit (neglecting biasing details). In electronics, a common-base (also known as grounded-base) amplifier is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a current buffer or voltage amplifier.

5. Common collector - Wikipedia

   en.wikipedia.org/wiki/Common_collector

   Figure 3: PNP version of the emitter-follower circuit, all polarities are reversed. A small voltage change on the input terminal will be replicated at the output (depending slightly on the transistor's gain and the value of the load resistance; see gain formula below). This circuit is useful because it has a large input impedance

6. p–n junction - Wikipedia

   en.wikipedia.org/wiki/P–n_junction

   PN junction operation in forward-bias mode, showing reducing depletion width. In forward bias, the p-type is connected with a positive electrical terminal and the n-type is connected with a negative terminal. The panels show energy band diagram, electric field, and net charge density. The built-in potential of the semiconductor varies ...

7. Early effect - Wikipedia

   en.wikipedia.org/wiki/Early_effect

   Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage. A greater reverse bias across the collector–base junction, for example, increases the collector–base depletion width, thereby decreasing the width of the charge carrier portion of the ...

8. Darlington transistor - Wikipedia

   en.wikipedia.org/wiki/Darlington_transistor

   Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]

9. Common emitter - Wikipedia

   en.wikipedia.org/wiki/Common_emitter

   The input signal is applied across the ground and the base circuit of the transistor. The output signal appears across ground and the collector of the transistor. Since the emitter is connected to the ground, it is common to signals, input and output. The common-emitter circuit is the most widely used of junction transistor amplifiers.