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The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. [1] [2] It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3904 NPN transistor. [3]
The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. [1] [2] [3] It is designed for low current and power, medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3906 PNP transistor. Both types were registered by Motorola Semiconductor in ...
Electric Field Sensor demonstrates extremely high gate impedance with a simple LED circuit; Driving a single MOSFET Detailed description of usage of a similar MOSFET; Datasheets. 2N7000, 200mA, TO-92 case Archived 27 September 2007 at the Wayback Machine, On Semiconductor; BS170, 500mA, TO-92 case Archived 24 October 2020 at the Wayback Machine ...
An infrared proximity sensor Optical proximity sensor in a 2016 Samsung smartphone.A proximity sensor is a standard feature of most smartphones, disabling the touchscreen when positioned near an ear during phone calls; more recent (late 2019-early 2020) smartphones with OLED displays may have the sensor mounted under the display.
Simplified cross section of a planar NPN bipolar junction transistor. BJTs consists of three differently doped semiconductor regions: the emitter region, the base region and the collector region. These regions are, respectively, p type, n type and p type in a PNP transistor, and n type, p type and n type in an NPN transistor.
The 2N3904 is an NPN transistor that can only switch one-third the current of the 2N2222 but has otherwise similar characteristics. The 2N3904 exhibits its forward gain (beta) peak at a lower current than the 2N2222, and is useful in amplifier applications with reduced I c , e.g., (gain peak at 10 mA for the 2N3904 but 150 mA for the 2N2222).
In electronics, a latch-up is a type of short circuit which can occur in an integrated circuit (IC). More specifically, it is the inadvertent creation of a low-impedance path between the power supply rails of a MOSFET circuit, triggering a parasitic structure which disrupts proper functioning of the part, possibly even leading to its destruction due to overcurrent.
For diodes or integrated circuits with two connections (e.g. temperature sensors) the middle lead is either not connected or omitted entirely. Comparison between the E-Line/Miniplast package and the TO-92 package. In the late 1960s, Ferranti introduced a smaller package with a compatible footprint, called "E-Line".