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Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The static qualifier differentiates SRAM from dynamic random-access memory (DRAM):
Common flash devices such as USB flash drives and memory cards provide only a block-level interface, or flash translation layer (FTL), which writes to a different cell each time to wear-level the device. This prevents incremental writing within a block; however, it does help the device from being prematurely worn out by intensive write patterns.
Examples of non-volatile memory are flash memory and ROM, PROM, EPROM, and EEPROM memory. Examples of volatile memory are dynamic random-access memory (DRAM) used for primary storage and static random-access memory (SRAM) used mainly for CPU cache. Most semiconductor memory is organized into memory cells each storing one bit (0 or 1).
The AVRs have 32 single-byte registers and are classified as 8-bit RISC devices. Flash, EEPROM, and SRAM are all integrated onto a single chip, removing the need for external memory in most applications. Some devices have a parallel external bus option to allow adding additional data memory or memory-mapped devices.
Flash memory – In this type the writing process is intermediate in speed between EEPROMS and RAM memory; it can be written to, but not fast enough to serve as main memory. It is often used as a semiconductor version of a hard disk , to store files.
The only current memory technology that easily competes with MRAM in terms of performance at comparable density is static random-access memory (SRAM). SRAM consists of a series of transistors arranged in a flip-flop, which will hold one of two states as long as power is applied. Since the transistors have a very low power requirement, their ...
The "22 nm" node is the process step following 32 nm in CMOS MOSFET semiconductor device fabrication. The typical half-pitch (i.e., half the distance between identical features in an array) for a memory cell using the process is around 22 nm. [citation needed] It was first demonstrated by semiconductor companies for use in RAM in 2008.