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Illustration of FEOL (device generation in the silicon, bottom) and BEOL (depositing metalization layers, middle part) to connect the devices. CMOS fabrication process. The front end of line (FEOL) is the first portion of IC fabrication where the individual components (transistors, capacitors, resistors, etc.) are patterned in a semiconductor substrate. [1]
CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]
The fabrication process is performed in highly specialized semiconductor fabrication plants, also called foundries or "fabs", [1] with the central part being the "clean room". In more advanced semiconductor devices, such as modern 14 / 10 / 7 nm nodes, fabrication can take up to 15 weeks, with 11–13 weeks being the industry average. [ 2 ]
Elpida Memory's 90 nm DDR2 SDRAM process – 2005; IBM PowerPC G5 970MP – 2005; IBM PowerPC G5 970GX – 2005; IBM Waternoose Xbox 360 Processor – 2005; IBM–Sony–Toshiba Cell processor – 2005; Intel Pentium 4 Prescott – 2004-02; Intel Celeron D Prescott-256 – 2004-05; Intel Pentium M Dothan – 2004-05; Intel Celeron M Dothan-1024 ...
The 3 μm process (3 micrometer process) is the level of MOSFET semiconductor process technology that was reached around 1977, [1] [2] by companies such as Intel. The 3 μm process refers to the minimum size that could be reliably produced. The smallest transistors and other circuit elements on a chip made with this process were around 3 ...
The BEOL process deposits metalization layers on the silicion to interconnect the individual devices generated during FEOL (bottom). CMOS fabrication process. Back end of the line or back end of line (BEOL) is a process in semiconductor device fabrication that consists of depositing metal interconnect layers onto a wafer already patterned with devices.
A process design kit (PDK) is a set of files used within the semiconductor industry to model a fabrication process for the design tools used to design an integrated circuit. The PDK is created by the foundry defining a certain technology variation for their processes. It is then passed to their customers to use in the design process.
The shallow trench isolation fabrication process of modern integrated circuits in cross-sections. Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between adjacent semiconductor device components.