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Micron and Intel created a joint venture in 2005, based in IM Flash Technologies in Lehi, Utah. [15] The two companies formed another joint venture in 2011, IM Flash Singapore, in Singapore. [16] In 2012 Micron became sole owner of this second joint venture. [17] In 2006 Micron acquired Lexar, an American manufacturer of digital media products. [3]
Engineering samples of second generation HMC memory chips were shipped in September 2013 by Micron. [3] Samples of 2 GB HMC (stack of 4 memory dies, each of 4 Gbit) are packed in a 31×31 mm package and have 4 HMC links. Other samples from 2013 have only two HMC links and a smaller package: 16×19.5 mm. [16]
A 16GB [1] DDR4 SO-DIMM module by Micron. DDR4 memory is supplied in 288-pin dual in-line memory modules (DIMMs), similar in size to 240-pin DDR3 DIMMs. DDR4 RAM modules feature pins that are spaced more closely at 0.85 mm compared to the 1.0 mm spacing in DDR3, allowing for a higher pin density within the same standard DIMM length of 133.35 mm ...
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Development of 3D XPoint began around 2012. [8] Intel and Micron had developed other non-volatile phase-change memory (PCM) technologies previously; [note 1] Mark Durcan of Micron said 3D XPoint architecture differs from previous offerings of PCM, and uses chalcogenide materials for both selector and storage parts of the memory cell that are faster and more stable than traditional PCM ...
The department said the Micron investments will create approximately 20,000 jobs and help the U.S. grow its share of advanced memory chip manufacturing from less than 2% to approximately 10% by 2035.
Reduced Latency DRAM (RLDRAM) is a type of specialty dynamic random-access memory (DRAM) with a SRAM-like interface originally developed by Infineon Technologies.It is a high-bandwidth, semi-commodity, moderately low-latency (relative to contemporaneous SRAMs) memory targeted at embedded applications (such as computer networking equipment) requiring memories that have moderate costs and low ...
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