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  2. Negative-bias temperature instability - Wikipedia

    en.wikipedia.org/wiki/Negative-bias_temperature...

    Negative-bias temperature instability (NBTI) is a key reliability issue in MOSFETs, a type of transistor aging. NBTI manifests as an increase in the threshold voltage and consequent decrease in drain current and transconductance of a MOSFET. The degradation is often approximated by a power-law dependence on time.

  3. Dennard scaling - Wikipedia

    en.wikipedia.org/wiki/Dennard_scaling

    In semiconductor electronics, Dennard scaling, also known as MOSFET scaling, is a scaling law which states roughly that, as transistors get smaller, their power density stays constant, so that the power use stays in proportion with area; both voltage and current scale (downward) with length.

  4. MOSFET - Wikipedia

    en.wikipedia.org/wiki/MOSFET

    If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that ...

  5. Early effect - Wikipedia

    en.wikipedia.org/wiki/Early_effect

    Download as PDF; Printable version; ... is the thermal voltage ... as is observed in practice. [citation needed] In the MOSFET the output resistance is given in ...

  6. Thermal simulations for integrated circuits - Wikipedia

    en.wikipedia.org/wiki/Thermal_simulations_for...

    Where is the thermal conductivity, is the density of the medium, is the specific heat, =, the thermal diffusivity and is the rate of heat generation per unit volume. Heat diffuses from the source following the above equation and solution in an homogeneous medium follows a Gaussian distribution.

  7. Johnson–Nyquist noise - Wikipedia

    en.wikipedia.org/wiki/Johnson–Nyquist_noise

    In 1905, in one of Albert Einstein's Annus mirabilis papers the theory of Brownian motion was first solved in terms of thermal fluctuations. The following year, in a second paper about Brownian motion, Einstein suggested that the same phenomena could be applied to derive thermally-agitated currents, but did not carry out the calculation as he considered it to be untestable.

  8. Hot-carrier injection - Wikipedia

    en.wikipedia.org/wiki/Hot-carrier_injection

    In MOSFETs, hot electrons have sufficient energy to tunnel through the thin gate oxide to show up as gate current, or as substrate leakage current.In a MOSFET, when a gate is positive, and the switch is on, the device is designed with the intent that electrons will flow laterally through the conductive channel, from the source to the drain.

  9. Thermal management (electronics) - Wikipedia

    en.wikipedia.org/wiki/Thermal_management...

    Thermal simulations give engineers a visual representation of the temperature and airflow inside the equipment. Thermal simulations enable engineers to design the cooling system; to optimise a design to reduce power consumption, weight and cost; and to verify the thermal design to ensure there are no issues when the equipment is built.