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Rectifier diodes (semiconductor or tube/valve) may have several voltage ratings, such as the peak inverse voltage (PIV) across the diode, and the maximum RMS input voltage to the rectifier circuit (which will be much less). Many small-signal transistors need to have any breakdown currents limited to much lower values to avoid excessive heating.
A transient-voltage-suppression diode can respond to over-voltages faster than other common over-voltage protection components such as varistors or gas discharge tubes. The actual clamping occurs in roughly one picosecond , but in a practical circuit the inductance of the wires leading to the device imposes a higher limit.
MELF: Metal electrode leadless face (usually for resistors and diodes) SOD: Small-outline diode. SOT: Small-outline transistor (also SOT-23, SOT-223, SOT-323). TO-XX: wide range of small pin count packages often used for discrete parts like transistors or diodes. TO-3: Panel-mount with leads; TO-5: Metal can package with radial leads
The Shockley ideal diode equation or the diode law (named after the bipolar junction transistor co-inventor William Bradford Shockley) models the exponential current–voltage (I–V) relationship of diodes in moderate forward or reverse bias. The article Shockley diode equation provides details.
In a diode model two diodes are connected back-to-back to make a PNP or NPN bipolar junction transistor (BJT) equivalent. This model is theoretical and qualitative. This model is theoretical and qualitative.
In addition to the transistor characteristic curves, the Type 575 is used to display dynamic characteristics of a wide range of semiconductor devices." (Tektronix, Catalog, 1967) A curve tracer is a specialised piece of electronic test equipment used to analyze the characteristics of discrete electronic components , such as diodes , transistors ...
The intersections of the load line with the transistor characteristic curves represent the circuit-constrained values of I C and V CE at different base currents. [2] If the transistor could pass all the current available, with no voltage dropped across it, the collector current would be the supply voltage V CC over R L. This is the point where ...
If a diode–transistor logic gate drives a transistor inverter of similar construction, the transistor will have a similar base-collector capacitance that is amplified by the transistor gain, so that it will be too slow to pass the glitch. But when the diode is much slower, recovery will become a concern:
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