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Breakdown voltage is a characteristic of an insulator that defines the maximum voltage difference that can be applied across the material before the insulator conducts. In solid insulating materials, this usually [citation needed] creates a weakened path within the material by creating permanent molecular or physical changes by the sudden current.
Diode–transistor logic (DTL) is a class of digital circuits that is the direct ancestor of transistor–transistor logic. It is called so because the logic gating functions AND and OR are performed by diode logic , while logical inversion (NOT) and amplification (providing signal restoration) is performed by a transistor (in contrast with ...
As for the second, the difference between the quasi-Fermi levels at the junction, he says that we can estimate the current flowing through the diode from this difference. He points out that the current at the p terminal is all holes, whereas at the n terminal it is all electrons, and the sum of these two is the constant total current.
If a diode–transistor logic gate drives a transistor inverter of similar construction, the transistor will have a similar base-collector capacitance that is amplified by the transistor gain, so that it will be too slow to pass the glitch. But when the diode is much slower, recovery will become a concern:
The intersections of the load line with the transistor characteristic curves represent the circuit-constrained values of I C and V CE at different base currents. [2] If the transistor could pass all the current available, with no voltage dropped across it, the collector current would be the supply voltage V CC over R L. This is the point where ...
It is connected alternately to the input and to the output of the converter via the commutation of the transistor and the diode (see figures 2 and 3). The two inductors L 1 and L 2 are used to convert respectively the input voltage source (V s) and the output voltage (V o) into current sources. At a short time scale, an inductor can be ...
The Shockley ideal diode equation or the diode law (named after the bipolar junction transistor co-inventor William Bradford Shockley) models the exponential current–voltage (I–V) relationship of diodes in moderate forward or reverse bias. The article Shockley diode equation provides details.
Tunnel diodes and Gunn diodes are examples of components that have negative resistance. Hysteresis vs single-valued: Devices which have hysteresis; that is, in which the current–voltage relation depends not only on the present applied input but also on the past history of inputs, have I–V curves consisting of families of closed loops. Each ...
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