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A nanowire MOSFET's current–voltage characteristic (left, using logarithmic y-axis) and a simulation of the electron density (right) forming a conductive inversion channel which connects at the ~0.45 V threshold voltage.
Every time the temperature sensing network determines that a rise above the specified junction temperature (), is imminent, measures such as clock gating, clock stretching, clock speed reduction and others (commonly referred to as thermal throttling) are applied to prevent the temperature to raise further. If the applied mechanisms are not ...
The subthreshold slope is a feature of a MOSFET's current–voltage characteristic.. In the subthreshold region, the drain current behaviour—though being controlled by the gate terminal—is similar to the exponentially decreasing current of a forward biased diode.
More specifically, over time positive charges become trapped at the oxide-semiconductor boundary underneath the gate of a MOSFET. These positive charges partially cancel the negative gate voltage without contributing to conduction through the channel as electron holes in the semiconductor are supposed to. When the gate voltage is removed, the ...
In semiconductor electronics, Dennard scaling, also known as MOSFET scaling, is a scaling law which states roughly that, as transistors get smaller, their power density stays constant, so that the power use stays in proportion with area; both voltage and current scale (downward) with length.
Thermal Conductivity: Theory, Properties, and Applications. Springer Science & Business Media. ISBN 978-0-306-48327-1. Younes Shabany (2011). Heat Transfer: Thermal Management of Electronics. CRC Press. ISBN 978-1-4398-1468-0. Xingcun Colin Tong (2011). Advanced Materials for Thermal Management of Electronic Packaging. Springer Science ...
is the thermal voltage, and n {\displaystyle n} is the ideality factor , also known as the quality factor , emission coefficient , or the material constant . The equation is called the Shockley ideal diode equation when the ideality factor n {\displaystyle n} equals 1, thus n {\displaystyle n} is sometimes omitted.
where I C is the DC collector current at the Q-point, and V T is the thermal voltage, typically about 26 mV at room temperature. For a typical current of 10 mA, g m ≈ 385 mS. The input impedance is the current gain (β) divided by the transconductance.
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