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A 16GB [1] DDR4 SO-DIMM module by Micron. DDR4 memory is supplied in 288-pin dual in-line memory modules (DIMMs), similar in size to 240-pin DDR3 DIMMs. DDR4 RAM modules feature pins that are spaced more closely at 0.85 mm compared to the 1.0 mm spacing in DDR3, allowing for a higher pin density within the same standard DIMM length of 133.35 mm ...
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed
PS Vita Memory Card 2012 64 GB Subcompact (15 mm × 12.5 mm × 1.6 mm [7]), compulsory DRM, up to 64 GB, proprietary (can be used on PS Vita only) P2 (storage media) Panasonic MicroP2: 2012 64 GB MicroP2 is a SDXC/SDHC card conforming to UHS-II (Ultra High Speed bus), and can be read by common SDHC/SDXC card readers. xD: Olympus, Fujifilm, Sony
Memory clock I/O bus clock Transfer rate Theoretical bandwidth DDR-200, PC-1600 100 MHz 100 MHz 200 MT/s 1.6 GB/s DDR-400, PC-3200 200 MHz 200 MHz 400 MT/s 3.2 GB/s DDR2-800, PC2-6400 200 MHz 400 MHz 800 MT/s 6.4 GB/s DDR3-1600, PC3-12800 200 MHz 800 MHz 1600 MT/s 12.8 GB/s DDR4-2400, PC4-19200 300 MHz 1200 MHz 2400 MT/s 19.2 GB/s
DDR and DDR2 memory is usually installed in single- or dual-channel configuration. DDR3 memory is installed in single-, dual-, tri-, and quad-channel configurations. Bit rates of multi-channel configurations are the product of the module bit-rate (given below) and the number of channels.
1800–2400 800 HT 512 Socket 754: AMD64, NX Bit: 1000 HT Socket 939: 90 Winchester 1800–2200 Socket 939: Venice 1800–2400 800 HT Socket 754: DDR2: MMX, 3DNow!+, SSE, SSE2, SSE3: 1000 HT Socket 939: San Diego 2200–2600 1024 Socket 939: Orleans 1800–2600 512 Socket AM2: AMD64, NX Bit, AMD-V: 65 Lima 2000–2800 90 Athlon 64 X2 ...
To access memory, a row must first be selected and loaded into the sense amplifiers. This row is then active, and columns may be accessed for read or write. The CAS latency is the delay between the time at which the column address and the column address strobe signal are presented to the memory module and the time at which the corresponding ...
It is for this reason that DDR3-2666 CL9 has a smaller absolute CAS latency than DDR3-2000 CL7 memory. Both for DDR3 and DDR4, the four timings described earlier are not the only relevant timings and give a very short overview of the performance of memory. The full memory timings of a memory module are stored inside of a module's SPD chip.
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