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  2. Bipolar junction transistor - Wikipedia

    en.wikipedia.org/wiki/Bipolar_junction_transistor

    The junction version known as the bipolar junction transistor (BJT), invented by Shockley in 1948, [12] was for three decades the device of choice in the design of discrete and integrated circuits. Nowadays, the use of the BJT has declined in favor of CMOS technology in the design of digital integrated circuits.

  3. Insulated-gate bipolar transistor - Wikipedia

    en.wikipedia.org/wiki/Insulated-gate_bipolar...

    Diagram of NPNP transistor made by Frosch and Derrick at Bell Labs, 1957 [8] The bipolar point-contact transistor was invented in December 1947 [9] at the Bell Telephone Laboratories by John Bardeen and Walter Brattain under the direction of William Shockley.

  4. File:Bjt forward active bands.svg - Wikipedia

    en.wikipedia.org/wiki/File:Bjt_forward_active...

    Energy band diagram of a simple NPN w:bipolar junction transistor in forward-active mode showing electron energy versus position. The w:depletion regions of the emitter-base and base-collector junctions are marked.

  5. Bipolar transistor biasing - Wikipedia

    en.wikipedia.org/wiki/Bipolar_transistor_biasing

    A load line diagram, illustrating an operating point in the transistor's active region. Bipolar transistors must be properly biased to operate correctly. In circuits made with individual devices (discrete circuits), biasing networks consisting of resistors are commonly employed.

  6. Transistor - Wikipedia

    en.wikipedia.org/wiki/Transistor

    Bipolar junction transistor (BJT): Heterojunction bipolar transistor, up to several hundred GHz, common in modern ultrafast and RF circuits; Schottky transistor; avalanche transistor; A Darlington transistor with the upper case removed so the transistor chip (the small square) can be seen. It is effectively two transistors on the same chip.

  7. File:Bjt equilibrium bands v2.svg - Wikipedia

    en.wikipedia.org/wiki/File:Bjt_equilibrium_bands...

    Energy band diagram of a simple bipolar junction transistor under equilibrium showing electron energy versus position. The depletion regions of the emitter-base and base-collector junctions are marked. <math>E_c</math> is the conduction band

  8. Early effect - Wikipedia

    en.wikipedia.org/wiki/Early_effect

    Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage. A greater reverse bias across the collector–base junction, for example, increases the collector–base depletion width , thereby decreasing the width of the charge carrier portion of ...

  9. Common collector - Wikipedia

    en.wikipedia.org/wiki/Common_collector

    Figure 1: Basic NPN common collector circuit (neglecting biasing details).. In electronics, a common collector amplifier (also known as an emitter follower) is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a voltage buffer.

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