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Charge carrier density, also known as carrier concentration, denotes the number of charge carriers per volume. In SI units, it is measured in m −3. As with any density, in principle it can depend on position. However, usually carrier concentration is given as a single number, and represents the average carrier density over the whole material.
Generally, the carrier mobility μ depends on temperature T, on the applied electric field E, and the concentration of localized states N. Depending on the model, increased temperature may either increase or decrease carrier mobility, applied electric field can increase mobility by contributing to thermal ionization of trapped charges, and ...
Free carrier concentration is the concentration of free carriers in a doped semiconductor. It is similar to the carrier concentration in a metal and for the purposes of calculating currents or drift velocities can be used in the same way. Free carriers are electrons that have been introduced into the conduction band (valence band) by doping ...
Mathematical Tables from Handbook of Chemistry and Physics was originally published as a supplement to the handbook up to the 9th edition (1952); afterwards, the 10th edition (1956) was published separately as CRC Standard Mathematical Tables. Earlier editions included sections such as "Antidotes of Poisons", "Rules for Naming Organic Compounds ...
However, trap-assisted recombination can also dominate in direct bandgap materials under conditions of very low carrier densities (very low level injection) or in materials with high density of traps such as perovskites. The process is named after William Shockley, William Thornton Read [9] and Robert N. Hall, [10] who published it in 1952.
The charge density at any point is equal to the charge carrier density multiplied by the elementary charge on the particles. However, because the elementary charge on an electron is so small (1.6⋅10 −19 C) and there are so many of them in a macroscopic volume (there are about 10 22 conduction electrons in a cubic centimeter of copper) the ...
From the kinetic theory of gases, [20] thermal conductivity of principal carrier i (p, e, f and ph) is =,, where n i is the carrier density and the heat capacity is per carrier, u i is the carrier speed and λ i is the mean free path (distance traveled by carrier before an scattering event). Thus, the larger the carrier density, heat capacity ...
The mobility is nearly independent of temperature between 10 K and 100 K, [10] [11] [12] which implies that the dominant scattering mechanism is defect scattering. Scattering by graphene's acoustic phonons intrinsically limits room temperature mobility to 200 000 cm 2 ⋅V −1 ⋅s −1 at a carrier density of 10 12 cm −2 , [ 12 ] [ 13 ] 10 ...