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  2. Shockley diode equation - Wikipedia

    en.wikipedia.org/wiki/Shockley_diode_equation

    Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]

  3. Kirchhoff's circuit laws - Wikipedia

    en.wikipedia.org/wiki/Kirchhoff's_circuit_laws

    The current entering any junction is equal to the current leaving that junction. i 2 + i 3 = i 1 + i 4. This law, also called Kirchhoff's first law, or Kirchhoff's junction rule, states that, for any node (junction) in an electrical circuit, the sum of currents flowing into that node is equal to the sum of currents flowing out of that node; or equivalently:

  4. Schottky diode - Wikipedia

    en.wikipedia.org/wiki/Schottky_diode

    While standard silicon diodes have a forward voltage drop of about 0.7 V and germanium diodes 0.3 V, Schottky diodes' voltage drop at forward biases of around 1 mA is in the range of 0.15 V to 0.46 V (see the 1N5817 [6] and 1N5711 [7]), which makes them useful in voltage clamping applications and prevention of transistor saturation.

  5. Diode modelling - Wikipedia

    en.wikipedia.org/wiki/Diode_modelling

    The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).

  6. Diode - Wikipedia

    en.wikipedia.org/wiki/Diode

    Their low efficiency required a much higher forward voltage to be applied (typically 1.4 to 1.7 V per "cell", with multiple cells stacked so as to increase the peak inverse voltage rating for application in high voltage rectifiers), and required a large heat sink (often an extension of the diode's metal substrate), much larger than the later ...

  7. Metal–semiconductor junction - Wikipedia

    en.wikipedia.org/wiki/Metal–semiconductor_junction

    The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact. [1] In contrast, a rectifying semiconductor–semiconductor junction, the most common semiconductor device today, is known as a p–n junction .)

  8. p–n diode - Wikipedia

    en.wikipedia.org/wiki/P–n_diode

    A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, in the detection of ...

  9. Semiconductor device - Wikipedia

    en.wikipedia.org/wiki/Semiconductor_device

    A semiconductor diode is a device typically made from a single p–n junction.At the junction of a p-type and an n-type semiconductor, there forms a depletion region where current conduction is inhibited by the lack of mobile charge carriers.