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The Shockley equation doesn't model this, but adding a resistance in series will. The reverse breakdown region (particularly of interest for Zener diodes) is not modeled by the Shockley equation. The Shockley equation doesn't model noise (such as Johnson–Nyquist noise from the internal resistance, or shot noise).
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
The Shockley diode (named after physicist William Shockley) is a four-layer semiconductor diode, which was one of the first semiconductor devices invented. It is a PNPN diode with alternating layers of P-type and N-type material.
From the Shockley ideal diode equation given above, it might appear that the voltage has a positive temperature coefficient (at a constant current), but usually the variation of the reverse saturation current term is more significant than the variation in the thermal voltage term.
The saturation current (or scale current), more accurately the reverse saturation current, is the part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage.
Designers must rely on a diode's specification sheet, which primarily provides a maximum forward voltage drop at one or more forward currents, a reverse leakage current (or saturation current), and a maximum reverse voltage limited by Zener or avalanche breakdown. Effects of temperature and process variation are usually included. Typical examples:
First edition. Electrons and Holes in Semiconductors with Applications to Transistor Electronics is a book by Nobel Prize winner William Shockley, [1] first published in 1950. . It was a primary source, and was used as the first textbook, for scientists and engineers learning the new field of semiconductors as applied to the development of the transis
The Shockley–Ramo theorem is a method for calculating the electric current induced by a charge moving in the vicinity of an electrode.Previously named simply the "Ramo Theorem", the modified name was introduced by D.S. McGregor et al. in 1998 [1] to recognize the contributions of both Shockley and Ramo to understanding the influence of mobile charges in a radiation detector.