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The Shockley equation is a constant current (steady state) relationship, and thus doesn't account for the diode's transient response, which includes the influence of its internal junction and diffusion capacitance and reverse recovery time.
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
The theory of solar cells explains the process by which light energy in photons is converted into electric current when the photons strike a suitable semiconductor device. The theoretical studies are of practical use because they predict the fundamental limits of a solar cell , and give guidance on the phenomena that contribute to losses and ...
From the Shockley ideal diode equation given above, it might appear that the voltage has a positive temperature coefficient (at a constant current), but usually the variation of the reverse saturation current term is more significant than the variation in the thermal voltage term.
The Shockley diode (named after physicist William Shockley) is a four-layer semiconductor diode, which was one of the first semiconductor devices invented. It is a PNPN diode with alternating layers of P-type and N-type material. It is equivalent to a thyristor with a disconnected gate.
The saturation current (or scale current), more accurately the reverse saturation current, is the part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage.
In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region, or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers have diffused away, or been forced away by an electric field.
For example, nearly all metals form a significant Schottky barrier to n-type germanium and an ohmic contact to p-type germanium, since the valence band edge is strongly pinned to the metal's Fermi level. [7] The solution to this inflexibility requires additional processing steps such as adding an intermediate insulating layer to unpin the bands.