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NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]
FlexFET is a planar, independently double-gated transistor with a damascene metal top gate MOSFET and an implanted JFET bottom gate that are self-aligned in a gate trench. . This device is highly scalable due to its sub-lithographic channel length; non-implanted ultra-shallow source and drain extensions; non-epi raised source and drain regions; and gate-last fl
In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device.
For the n-channel depletion MOS transistor, a sufficient negative V GS will deplete (hence its name) the conductive channel of its free electrons switching the transistor “OFF”. Likewise for a p-channel "depletion-mode" MOS transistor a sufficient positive gate-source voltage will deplete the channel of its free holes, turning it “OFF”.
Pin configuration of the 6522 VIA Rockwell 6522 VIA. The MOS Technology 6522 Versatile Interface Adapter (VIA) is an integrated circuit that was designed and manufactured by MOS Technology as an I/O port controller for the 6502 family of microprocessors.
The 6507 uses a 28-pin configuration, with 13 address pins (A0..A12) and 8 data pins (D0..D7). The seven remaining pins are used for power (Vss, Vcc), the CPU timing clock (φ0, φ2), to reset the CPU (the /RES pin), to request a CPU wait state during its next memory read access (the RDY pin), and for the CPU to indicate if a read or write memory (or MMIO device) access is being performed (the ...
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The wide intrinsic region makes the PIN diode an inferior rectifier (one typical function of a diode), but it makes it suitable for attenuators, fast switches, photodetectors, and high-voltage power electronics applications. The PIN photodiode was invented by Jun-Ichi Nishizawa and his colleagues in 1950. It is a semiconductor device.
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