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A single common-emitter pnp-type transistor can operate correctly in saturation mode, with only ≈0.25 V voltage drop, but also with impractically high base currents. [29] A compound pnp-type transistor does not need as much drive current, but it requires at least a 1 V voltage drop. [ 29 ]
The 2N2907 is a commonly available PNP bipolar junction transistor used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds.
An IGBT cell is constructed similarly to an n-channel vertical-construction power MOSFET, except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor. This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel MOSFET. The whole ...
The output is usually connected to an external pull-up resistor, which pulls the output voltage to the resistor's supply voltage when the transistor is off. For PNP open collector outputs, the emitter of the PNP transistor is internally connected to the positive voltage rail, so the collector outputs a high voltage when the transistor is on or ...
Some DTL designs used two power supplies with alternating layers of NPN and PNP transistors to increase the fan-out. Transistor–transistor logic (TTL) was a great improvement over these. In early devices, fan-out improved to 10, and later variations reliably achieved 20.
A Class B push–pull output driver using a pair of complementary PNP and NPN bipolar junction transistors configured as emitter followers. A push–pull amplifier is a type of electronic circuit that uses a pair of active devices that alternately supply current to, or absorb current from, a connected load. This kind of amplifier can enhance ...
1950's PNP Transistors by General Electric. TOP ROW (L-R): 2N43, 2N44, 2N45, 2N107 and 2N188A BOTTOM ROW: 2N107, 2N191 and 2N241. The 2N107 is an early germanium alloy junction PNP transistor developed by General Electric (GE) in 1955, to become GE's entry into the electronic hobbyist market successfully started with the CK722 transistor.
In the depletion-load NMOS logic realization in the middle below, the switches are the transistors T2 and T3, and the transistor T1 fulfills the function of the pull-up resistor. In the CMOS realization on the right below, the switches are the n-type transistors T3 and T4, and the pull-up resistor is made up of the p-type transistors T1 and T2 ...