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Focused ion beam, also known as FIB, is a technique used particularly in the semiconductor industry, materials science and increasingly in the biological field for site-specific analysis, deposition, and ablation of materials. A FIB setup is a scientific instrument that resembles a scanning electron microscope (SEM).
A small ion beam rocket being tested by NASA. An ion beam is a beam of ions, a type of charged particle beam. Ion beams have many uses in electronics manufacturing (principally ion implantation) and other industries. There are many ion beam sources, some derived from the mercury vapor thrusters developed by NASA in the 1960s. The most widely ...
The einzel lens principle in a simplified form was also used as a focusing mechanism in display and television cathode ray tubes, [3] [4] and has the advantage of providing a good sharply focused spot throughout the useful life of the tube's electron gun, with minimal or no readjustment needed (many monochrome TVs did not have or need focus controls), although in high-resolution monochrome ...
Ion beam deposition (IBD) is a process of applying materials to a target through the application of an ion beam. [1] Ion beam deposition setup with mass separator. An ion beam deposition apparatus typically consists of an ion source, ion optics, and the deposition target. Optionally a mass analyzer can be incorporated. [2]
The basic layout of an ion beam apparatus is an accelerator which produces an ion beam that is feed through an evacuated beam-transport tube to a beam handling device. This device isolates the ion species and charge of interest which then are transported through an evacuated beam-transport tube into the target chamber.
A particle beam is a stream of charged or neutral particles.In particle accelerators, these particles can move with a velocity close to the speed of light.There is a difference between the creation and control of charged particle beams and neutral particle beams, as only the first type can be manipulated to a sufficient extent by devices based on electromagnetism.
Ion beam deposition system with mass separator. Gas flows through the ion source between the anode and the cathode. A positive voltage is applied to the anode. This voltage, combined with the high magnetic field between the tips of the internal and external cathodes allow a plasma to start.
Ion beam mixing can be further enhanced by heat spike effects [4] Ion mixing (IM) is essentially similar in result to interdiffusion, hence most models of ion mixing involve an effective diffusion coefficient that is used to characterize thickness of the reacted layer as a function of ion beam implantation over a period of time.