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Anisotropy (/ ˌænaɪˈsɒtrəpi, ˌænɪ -/) is the structural property of non-uniformity in different directions, as opposed to isotropy. An anisotropic object or pattern has properties that differ according to direction of measurement. For example, many materials exhibit very different physical or mechanical properties when measured along ...
Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module in fabrication, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which ...
Deep reactive-ion etching. Deep reactive-ion etching (DRIE) is a special subclass of reactive-ion etching (RIE). It enables highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers /substrates, typically with high aspect ratios. It was developed for microelectromechanical systems (MEMS), which ...
The patterned SAMs layer is a step in a series of steps to create complex microstructures. For example, applying the SAM layer on top of gold and etching creates microstructures of gold. After this step etched areas of gold exposes the substrate which can further be etched using traditional anisotropic etch techniques. Because of the ...
In semiconductor manufacturing, isotropic etching is a method commonly used to remove material from a substrate via a chemical process using an etchant substance. The etchant may be in liquid-, gas- or plasma -phase, [ 1 ] although liquid etchants such as buffered hydrofluoric acid (BHF) for silicon dioxide etching are more often used.
A reactive-ion etching setup in a laboratory cleanroom. Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum ...
This is known as anisotropic etching and one of the most common examples is the etching of silicon in KOH (potassium hydroxide), where Si <111> planes etch approximately 100 times slower than other planes (crystallographic orientations). Therefore, etching a rectangular hole in a (100)-Si wafer results in a pyramid shaped etch pit with 54.7 ...
Isotropy. In physics and geometry, isotropy (from Ancient Greek ἴσος (ísos) 'equal' and τρόπος (trópos) 'turn, way') is uniformity in all orientations. Precise definitions depend on the subject area. Exceptions, or inequalities, are frequently indicated by the prefix a- or an-, hence anisotropy.