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The maximum random access memory (RAM) installed in any computer system is limited by hardware, software and economic factors. The hardware may have a limited number of address bus bits, limited by the processor package or design of the system. Some of the address space may be shared between RAM, peripherals, and read-only memory.
RAM drive software allows part of a computer's RAM (memory) to be seen as if it were a disk drive, with volume name and, if supported by the operating system, drive letter. A RAM drive has much faster read and write access than a hard drive with rotating platters, and is volatile, being destroyed with its contents when a computer is shut down ...
Mac OS X users can use the hdid, newfs (or newfs hfs) and mount utilities to create, format and mount a RAM drive. A RAM drive innovation introduced in 1986 but made generally available in 1987 [3] [4] by Perry Kivolowitz for AmigaOS was the ability of the RAM drive to survive most crashes and reboots. Called the ASDG Recoverable Ram Disk, the ...
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Random Access Memory is memory storage that if found in electronic devices such as computers. It holds data while the computer is on so that it can be quickly accessed by the CPU or (Central Processing Unit). [3] Ram is different from regular storage units such as Hard Disks, Solid State Drives, and Solid State Hybrid Drives.
DDR4 memory is supplied in 288-pin dual in-line memory modules (DIMMs), similar in size to 240-pin DDR3 DIMMs. DDR4 RAM modules feature pins that are spaced more closely at 0.85 mm compared to the 1.0 mm spacing in DDR3, allowing for a higher pin density within the same standard DIMM length of 133.35 mm (5¼ inches).
In computing, an input–output memory management unit (IOMMU) is a memory management unit (MMU) connecting a direct-memory-access–capable (DMA-capable) I/O bus to the main memory. Like a traditional MMU, which translates CPU -visible virtual addresses to physical addresses , the IOMMU maps device-visible virtual addresses (also called device ...
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory .