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  2. Resistive random-access memory - Wikipedia

    en.wikipedia.org/wiki/Resistive_random-access_memory

    Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.

  3. Memristor - Wikipedia

    en.wikipedia.org/wiki/Memristor

    According to the original 1971 definition, the memristor is the fourth fundamental circuit element, forming a non-linear relationship between electric charge and magnetic flux linkage. In 2011, Chua argued for a broader definition that includes all two-terminal non-volatile memory devices based on resistance switching. [16]

  4. Programmable metallization cell - Wikipedia

    en.wikipedia.org/wiki/Programmable_metallization...

    PMC is a two terminal resistive memory technology developed at Arizona State University. PMC is an electrochemical metallization memory that relies on redox reactions to form and dissolve a conductive filament. [2] The state of the device is determined by the resistance across the two terminals.

  5. Magnetoresistive RAM - Wikipedia

    en.wikipedia.org/wiki/Magnetoresistive_RAM

    A memory device is built from a grid of such "cells". The simplest method of reading is accomplished by measuring the electrical resistance of the cell. A particular cell is (typically) selected by powering an associated transistor that switches current from a supply line through the cell to ground.

  6. Nano-RAM - Wikipedia

    en.wikipedia.org/wiki/Nano-RAM

    The NRAM acts as a resistive non-volatile random-access memory (RAM) and can be placed in two or more resistive modes depending on the resistive state of the CNT fabric. When the CNTs are not in contact the resistance state of the fabric is high and represents an "off" or "0" state.

  7. Ferroelectric RAM - Wikipedia

    en.wikipedia.org/wiki/Ferroelectric_RAM

    Each storage element, a cell, consists of one capacitor and one transistor, a so-called "1T-1C" device. The 1T-1C storage cell design in a FeRAM is similar in construction to the storage cell in DRAM, in that both cell types include one capacitor and one access transistor.

  8. Moral Injury: The Grunts - The Huffington Post

    projects.huffingtonpost.com/moral-injury/the...

    Can we imagine ourselves back on that awful day in the summer of 2010, in the hot firefight that went on for nine hours? Men frenzied with exhaustion and reckless exuberance, eyes and throats burning from dust and smoke, in a battle that erupted after Taliban insurgents castrated a young boy in the village, knowing his family would summon nearby Marines for help and the Marines would come ...

  9. 3D XPoint - Wikipedia

    en.wikipedia.org/wiki/3D_XPoint

    3D XPoint has been stated to use electrical resistance and to be bit addressable. [15] Similarities to the resistive random-access memory under development by Crossbar Inc. have been noted, but 3D XPoint uses different storage physics. [8] Specifically, transistors are replaced by threshold switches as selectors in the memory cells.