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Gallium arsenide was first synthesized and studied by Victor Goldschmidt in 1926 by passing arsenic vapors mixed with hydrogen over gallium(III) oxide at 600 °C. [7] [8] The semiconductor properties of GaAs and other III-V compounds were patented by Heinrich Welker at Siemens-Schuckert in 1951 [9] and described in a 1952 publication. [10]
Compounds containing Ga–Ga bonds are true gallium(II) compounds, such as GaS (which can be formulated as Ga 2 4+ (S 2−) 2) and the dioxan complex Ga 2 Cl 4 (C 4 H 8 O 2) 2. [1] There are also compounds of gallium with negative oxidation states, ranging from -5 to -1, most of these compounds being magnesium gallides (Mg x Ga y ).
These compounds are mainly of academic interest. For example, "sodium arsenide" is a structural motif adopted by many compounds with the A 3 B stoichiometry. Indicative of their salt-like properties, hydrolysis of alkali metal arsenides gives arsine: Na 3 As + 3 H 2 O → AsH 3 + 3 NaOH Nickel arsenide is a common impurity in ores of nickel.
Double, triple, and quadruple bonds are represented by the symbols =, #, and $ respectively as illustrated by the SMILES O=C=O (carbon dioxide CO 2), C#N (hydrogen cyanide HCN) and [Ga+]$[As-] (gallium arsenide). An additional type of bond is a "non-bond", indicated with ., to indicate that two parts are not bonded together. For example ...
Arsenic is used as the group 15 element in the III-V semiconductors gallium arsenide, indium arsenide, and aluminium arsenide. [10] The valence electron count of GaAs is the same as a pair of Si atoms, but the band structure is completely different which results in distinct bulk properties. [11]
Gallium arsenide antimonide, also known as gallium antimonide arsenide or GaAsSb (Ga As (1-x) Sb x), is a ternary III-V semiconductor compound; x indicates the fractions of arsenic and antimony in the alloy. GaAsSb refers generally to any composition of the alloy. It is an alloy of gallium arsenide (GaAs) and gallium antimonide (GaSb).
Arsenic is used as the group 5 element in the III-V semiconductors gallium arsenide, indium arsenide, and aluminium arsenide. [41] The valence electron count of GaAs is the same as a pair of Si atoms, but the band structure is completely different which results in distinct bulk properties. [ 42 ]
The carrier density is important for semiconductors, where it is an important quantity for the process of chemical doping. Using band theory , the electron density, n 0 {\displaystyle n_{0}} is number of electrons per unit volume in the conduction band.