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The term "hot electron" comes from the effective temperature term used when modelling carrier density (i.e., with a Fermi-Dirac function) and does not refer to the bulk temperature of the semiconductor (which can be physically cold, although the warmer it is, the higher the population of hot electrons it will contain all else being equal).
The heat dissipation in integrated circuits problem has gained an increasing interest in recent years due to the miniaturization of semiconductor devices. The temperature increase becomes relevant for cases of relatively small-cross-sections wires, because such temperature increase may affect the normal behavior of semiconductor devices.
The efficiency of a thermoelectric device for electricity generation is given by , defined as =.. The maximum efficiency of a thermoelectric device is typically described in terms of its device figure of merit where the maximum device efficiency is approximately given by [7] = + ¯ + ¯ +, where is the fixed temperature at the hot junction, is the fixed temperature at the surface being cooled ...
The Peltier effect can be considered as the back-action counterpart to the Seebeck effect (analogous to the back-EMF in magnetic induction): if a simple thermoelectric circuit is closed, then the Seebeck effect will drive a current, which in turn (by the Peltier effect) will always transfer heat from the hot to the cold junction.
Many semiconductors and their surrounding optics are small, making it difficult to measure junction temperature with direct methods such as thermocouples and infrared cameras. Junction temperature may be measured indirectly using the device's inherent voltage/temperature dependency characteristic.
The thermal copper pillar bump, also known as the "thermal bump", is a thermoelectric device made from thin-film thermoelectric material embedded in flip chip interconnects (in particular copper pillar solder bumps) for use in electronics and optoelectronic packaging, including: flip chip packaging of CPU and GPU integrated circuits (chips), laser diodes, and semiconductor optical amplifiers ...
Rapid thermal processing (RTP) is a semiconductor manufacturing process which heats silicon wafers to temperatures exceeding 1,000°C for not more than a few seconds. During cooling wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock.
The band gap opens up at low temperatures due to hybridization of localized electrons (mostly f-electrons) with conduction electrons, a correlation effect known as the Kondo effect. As a consequence, a transition from metallic behavior to insulating behavior is seen in resistivity measurements. The band gap could be either direct or indirect.