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Ideal diode with a series voltage source and resistor. The I-V characteristic of the final circuit looks like this: I-V characteristic of an ideal diode with a series voltage source and resistor. The real diode now can be replaced with the combined ideal diode, voltage source and resistor and the circuit then is modelled using just linear elements.
The transfer function of an ideal diode has been given at the top of this (non-linear) section. However, this formula is rarely used in network analysis, a piecewise approximation being used instead. It can be seen that the diode current rapidly diminishes to -I o as the voltage falls. This current, for most purposes, is so small it can be ignored.
DAEs assume smooth characteristics for individual components; for example, a diode can be modeled/represented in a MNA with DAEs via the Shockley equation, but one cannot use an apparently simpler (more ideal) model where the sharply exponential forward and breakdown conduction regions of the curve are just straight vertical lines.
Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3] He calls it "a theoretical rectification formula giving the maximum rectification", with a footnote referencing a paper by Carl Wagner , Physikalische Zeitschrift 32 , pp ...
The Shockley ideal diode equation or the diode law (named after the bipolar junction transistor co-inventor William Bradford Shockley) models the exponential current–voltage (I–V) relationship of diodes in moderate forward or reverse bias. The article Shockley diode equation provides details.
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Zener diodes have a low breakdown voltage. A standard value for breakdown voltage is for instance 5.6 V. This means that the voltage at the cathode cannot be more than about 5.6 V higher than the voltage at the anode (though there is a slight rise with current), because the diode breaks down, and therefore conducts, if the voltage gets any higher.
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