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Band-gap engineering is the process of controlling or altering the band gap of a material by controlling the composition of certain semiconductor alloys, such as GaAlAs, InGaAs, and InAlAs. It is also possible to construct layered materials with alternating compositions by techniques like molecular-beam epitaxy .
In semiconductors, the band gap of a semiconductor can be of two basic types, a direct band gap or an indirect band gap. The minimal-energy state in the conduction band and the maximal-energy state in the valence band are each characterized by a certain crystal momentum (k-vector) in the Brillouin zone. If the k-vectors are different, the ...
The band gap (usually given the symbol ) gives the energy difference between the lower edge of the conduction band and the upper edge of the valence band. Each semiconductor has different electron affinity and band gap values. For semiconductor alloys it may be necessary to use Vegard's law to calculate these values.
In a semiconductor or band insulator, the Fermi level is surrounded by a band gap, referred to as the band gap (to distinguish it from the other band gaps in the band structure). The closest band above the band gap is called the conduction band, and the closest band beneath the band gap is called the valence band.
In semiconductors and insulators the two bands are separated by a band gap, while in conductors the bands overlap. A band gap is an energy range in a solid where no electron states can exist due to the quantization of energy. Within the concept of bands, the energy gap between the valence band and the conduction band is the band gap. [1]
If an energy gap exists in the band structure of a material, it is called band gap. The physical properties of semiconductors are to a large extent determined by their band gaps, but also for insulators and metals the band structure—and thus any possible band gaps—govern their electronic properties. [1] [2]
In this staggered gap, the band gap of the second semiconductor is no longer restricted to being smaller than the first semiconductor, although the band gap of the second semiconductor is still partially contained in the first semiconductor. In type III however, the conduction band of the second semiconductor overlaps with the valence band of ...
Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. Impure polycrystalline material has the appearance of pale orange or grayish pieces. Undoped single crystals are orange, but strongly doped wafers appear darker due to free-carrier absorption.