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  2. DDR SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR_SDRAM

    The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed

  3. DDR4 SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR4_SDRAM

    A 16GB [1] DDR4 SO-DIMM module by Micron. DDR4 memory is supplied in 288-pin dual in-line memory modules (DIMMs), similar in size to 240-pin DDR3 DIMMs. DDR4 RAM modules feature pins that are spaced more closely at 0.85 mm compared to the 1.0 mm spacing in DDR3, allowing for a higher pin density within the same standard DIMM length of 133.35 mm ...

  4. Synchronous dynamic random-access memory - Wikipedia

    en.wikipedia.org/wiki/Synchronous_dynamic_random...

    The DDR4 chips run at 1.2 V or less, [18] [19] compared to the 1.5 V of DDR3 chips, and have in excess of 2 billion data transfers per second. They were expected to be introduced at frequency rates of 2133 MHz, estimated to rise to a potential 4266 MHz [ 20 ] and lowered voltage of 1.05 V [ 21 ] by 2013.

  5. JEDEC memory standards - Wikipedia

    en.wikipedia.org/wiki/JEDEC_memory_standards

    The Joint Electron Device Engineering Council characterizes its standardization efforts as follows: [1] JEDEC standards and publications are designed to serve the public interest through eliminating misunderstandings between manufacturers and purchasers, facilitating interchangeability and improvement of products, and assisting the purchaser in selecting and obtaining with minimum delay the ...

  6. DIMM - Wikipedia

    en.wikipedia.org/wiki/DIMM

    16 GiB DDR4-2666 1.2 V Unbuffered DIMM (UDIMM). DDR , DDR2 , DDR3 , DDR4 and DDR5 all have different pin counts and/or different notch positions, and none of them are forward compatible or backward compatible .

  7. GDDR4 SDRAM - Wikipedia

    en.wikipedia.org/wiki/GDDR4_SDRAM

    The maximum number of memory banks for GDDR4 has been increased to 8. Core voltage was decreased to 1.5 V. Data Bus Inversion adds an additional active-low DBI# pin to the address/command bus and each byte of data. If there are at more than four 0 bits in the data byte, the byte is inverted and the DBI# signal transmitted low.

  8. Random-access memory - Wikipedia

    en.wikipedia.org/wiki/Random-access_memory

    [1] [2] A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media (such as hard disks and magnetic tape), where the time required to read and write data items varies significantly ...

  9. Double data rate - Wikipedia

    en.wikipedia.org/wiki/Double_data_rate

    Describing the bandwidth of a double-pumped bus can be confusing. Each clock edge is referred to as a beat, with two beats (one upbeat and one downbeat) per cycle.. Technically, the hertz is a unit of cycles per second, but many people refer to the number of transfers p